Virtual Metrology for Plasma Etch using Tool Variables
Lynn, Shane and Ringwood, John and Ragnoli, Emanuele and McLoone, Sean and MacGearailt, Niall (2009) Virtual Metrology for Plasma Etch using Tool Variables. Advanced Semiconductor Manufacturing Conference, 2009. . pp. 143-148. ISSN 1078-8743 AbstractThis paper presents work carried out with data
from an industrial plasma etch process. Etch tool parameters, available during wafer processing time, are used to predict wafer etch rate. These parameters include variables such as power, pressure, temperature, and RF measurement. A number of variable selection techniques are examined, and a novel piecewise modelling effort is discussed. The achievable accuracy and complexity trade-offs of plasma etch modelling are discussed
in detail.
| Keywords: | Virtual Metrology; Plasma Etch; Tool
Variables; Plasma materials processing; |
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| Subjects: | Science & Engineering > Electronic Engineering |
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| ID Code: | 1934 |
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| Deposited By: | Professor John Ringwood |
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| Deposited On: | 19 May 2010 14:51 |
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| Journal or Publication Title: | Advanced Semiconductor Manufacturing Conference, 2009. |
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| Publisher: | IEEE |
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| Refereed: | Yes |
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