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Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon

Mulligan, F.J. and Henry, M.O. and Moloney, K.A. and Treacy, J. and Lightowlers, E.C. (1984) Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon. Journal of Physics C: Solid State Physics, 17. pp. 6245-6251.

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Abstract

The authors report the results of preliminary uniaxial stress studies of the beryllium pair isoelectronic bound exciton absorption spectrum in silicon. The results confirm that the exciton behaves as an isoelectronic acceptor.

Item Type: Article
Keywords: Uniaxial stress studies; Be pair; silicon;
Subjects: Science & Engineering > Experimental Physics
Item ID: 814
Depositing User: Dr. Frank Mulligan
Date Deposited: 30 Nov 2007
Journal or Publication Title: Journal of Physics C: Solid State Physics
Publisher: The Institute of Physics; IOP Publishing Ltd.
Refereed: Yes
URI:

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