Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon
Mulligan, F.J. and Henry, M.O. and Moloney, K.A. and Treacy, J. and Lightowlers, E.C. (1984) Uniaxial stress studies of the Be pair bound exciton absorption spectrum in silicon. Journal of Physics C: Solid State Physics, 17 . pp. 6245-6251. AbstractThe authors report the results of preliminary uniaxial stress studies of the beryllium pair isoelectronic bound exciton absorption spectrum in silicon. The results confirm that the exciton behaves as an isoelectronic acceptor.
| Keywords: | Uniaxial stress studies; Be pair; silicon; |
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| Subjects: | Science & Engineering > Experimental Physics |
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| ID Code: | 814 |
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| Deposited By: | Dr. Frank Mulligan |
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| Deposited On: | 30 Nov 2007 |
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| Journal or Publication Title: | Journal of Physics C: Solid State Physics |
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| Publisher: | The Institute of Physics; IOP Publishing Ltd. |
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| Refereed: | Yes |
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| URL: | http://www.iop.org/ |
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